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EP 0297778 A3 1991-04-03     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16  EP 0297778 A2 1989-01-04     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16

EP 0297778    KR 0134096 B1 1998-04-20     Titel (TI): APPARATUS INCLUDING RESONANT TUNNELING DEVICE HVING MULTIPLE-PEAK CURRENT VOLTAGE CHARACTERISTICS Erfinder: CAPASS FEDERICO (US);   YI CHO ALFRED (US);   SEN SUSANTA (US);   SHOJI MASAKAZU (US);   SIVCO DEBORAH (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: KR19880008140 1988-06-30 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L29/86; H01L29/66 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    JP 1929398 C 1995-05-12     Titel (TI): SEMICONDUCTOR DEVICE Erfinder: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN;   MASAKAZU SHIYOOJI;   DEBUORAA SHIBUKO Antragsteller: AMERICAN TELEPHONE & TELEGRAPH Anmeldenummer: JP19880162791 1988-07-01 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L27/08; H01L27/10; H01L29/203; H01L29/66; H01L29/88; H03K5/00; H03K17/58; H03K19/20; H03M13/00 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    JP 6052789 B 1994-07-06     Titel (TI): SEMICONDUCTOR DEVICE Erfinder: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN;   MASAKAZU SHIYOOJI;   DEBUORAA SHIBUKO Antragsteller: AMERICAN TELEPHONE & TELEGRAPH Anmeldenummer: JP19880162791 1988-07-01 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L27/08; H01L27/10; H01L29/203; H01L29/66; H01L29/88; H03K5/00; H03K17/58; H03K19/20; H03M13/00 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    KR 9302817 B1 1993-04-10     Titel (TI): RESONANT-TUNNELING DEVICE Erfinder: CAPASSO FEDERICO (US);   CHO ALFRED E (US);   SEN SUSANTA (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: KR19880014355 1988-11-02 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: H01L27/10 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88    CA 1284234 C 1991-05-14     Titel (TI): APPARATUS INCLUDING RESONANT-TUNNELING DEVICE HAVING MULTIPLE-PEAK CURRENT-VOLTAGE CHARACTERISTICS Erfinder: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US);   SHOJI MASAKAZU (US);   SIVCO DEBORAH (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: CA19880570741 1988-06-29 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L27/06; G11C11/56; H01L29/88 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    CA 1282871 C 1991-04-09     Titel (TI): RESONANT-TUNNELING DEVICE, AND MODE OF DEVICE OPERATION Erfinder: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: CA19880582271 1988-11-04 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/56; H01L29/80 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88    EP 0297778 A3 1991-04-03     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    EP 0320110 A3 1990-05-09     Titel (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Erfinder: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880310336 1988-11-03 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88    US 4902912 A 1990-02-20     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics Erfinder: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US);   SHOJI MASAKAZU (US);   SIVCO DEBORAH (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: US19890366340 1989-06-13 Prioritäts-Nummer(n): US19890366340 1989-06-13   US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L29/205; H01L29/88 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    JP 2003142 A 1990-01-08     Titel (TI): SEMICONDUCTOR DEVICE Erfinder: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN Antragsteller: AMERICAN TELEPHONE & TELEGRAPH Anmeldenummer: JP19880277613 1988-11-04 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; H01L27/10; H01L29/80; H01L29/804 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88    US 4853753 A 1989-08-01     Titel (TI): Resonant-tunneling device, and mode of device operation Erfinder: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: US19870117583 1987-11-05 Prioritäts-Nummer(n): US19870117583 1987-11-05   US19870068974 1987-07-01 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/76; H01L29/88; H03B19/16    EP 0320110 A2 1989-06-14     Titel (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Erfinder: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880310336 1988-11-03 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88    JP 1039768 A 1989-02-10     Titel (TI): SEMICONDUCTOR DEVICE Erfinder: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN;   MASAKAZU SHIYOOJI;   DEBUORAA SHIBUKO Antragsteller: AMERICAN TELEPHONE & TELEGRAPH Anmeldenummer: JP19880162791 1988-07-01 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L27/08; H01L27/10; H01L29/203; H01L29/66; H01L29/88; H03K5/00; H03K17/58; H03K19/20; H03M13/00 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    EP 0297778 A2 1989-01-04     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16

Zitierte Dokumente

Zitierende Dokumente

Non Patent Literature
SR: ELECTRONICS LETTERS, vol. 23, no. 5, 26th February 1987, pages 225-226; F. CAPASSO et al.: "Resonant tunnelling gate field-effect transistor" SR: IEEE ELECTRON DEVICE LETTERS, vol. EDL-8, no. 7, July 1987, pages 297-299; F. CAPASSO et al.: "Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications" SR: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-34, no. 10, October 1987, pages 2185-2191; S. SEN et al.: "Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity"
EP 0320110 A3 1990-05-09     Titel (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Erfinder: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880310336 1988-11-03 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88  EP 0320110 A2 1989-06-14  SR   Titel (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Erfinder: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880310336 1988-11-03 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88  DE 2607940 A1 1977-09-08  SR   Erfinder: TSU RAPHAEL Antragsteller: MAX PLANCK GESELLSCHAFT Anmeldenummer: DE19762607940 1976-02-27 Prioritäts-Nummer(n): DE19762607940 1976-02-27 EPC-Klassifikation: H01L21/203C; H01L21/363; H01L29/15B2C; H01L29/165; H01L29/205; H01L29/76C IPC-Klassifikation: H01L29/267 CI-Klassifikation: H01L21/02; H01L29/02; H01L29/66 AI-Klassifikation: H01L21/203; H01L21/363; H01L29/15; H01L29/165; H01L29/205; H01L29/76	EP 0708487 B1 2001-08-29  CA   Titel (TI): Memory device Erfinder: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Antragsteller: HITACHI EUROP LTD (GB) Anmeldenummer: EP19950304591 1995-06-29 Prioritäts-Nummer(n): GB19940021138 1994-10-20 EPC-Klassifikation: G11C11/56; H01L27/102D; H01L29/88R IPC-Klassifikation: H01L29/88; H01L27/102 CI-Klassifikation: G11C11/56; H01L27/102; H01L29/66 AI-Klassifikation: G11C11/56; H01L27/102; H01L29/88  EP 0364987 B1 1996-05-22     Titel (TI): Semiconductor device. Erfinder: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU Antragsteller: HITACHI LTD (JP) Anmeldenummer: EP19890119349 1989-10-18 Prioritäts-Nummer(n): JP19890001390 1989-01-10   JP19880263892 1988-10-21 EPC-Klassifikation: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56 IPC-Klassifikation: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Klassifikation: G02F3/00; G06N3/00; G11C11/56 AI-Klassifikation: G02F3/02; G06N3/063; G06N3/067; G11C11/56  EP 0708487 A1 1996-04-24  CA   Titel (TI): Memory device Erfinder: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Antragsteller: HITACHI EUROP LTD (GB) Anmeldenummer: EP19950304591 1995-06-29 Prioritäts-Nummer(n): GB19940021138 1994-10-20 EPC-Klassifikation: G11C11/56; H01L27/102D; H01L29/88R IPC-Klassifikation: H01L29/88; H01L27/102 CI-Klassifikation: G11C11/56; H01L27/102; H01L29/66 AI-Klassifikation: G11C11/56; H01L27/102; H01L29/88  EP 0364987 A3 1991-03-13     Titel (TI): Semiconductor device. Erfinder: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU Antragsteller: HITACHI LTD (JP) Anmeldenummer: EP19890119349 1989-10-18 Prioritäts-Nummer(n): JP19890001390 1989-01-10   JP19880263892 1988-10-21 EPC-Klassifikation: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56 IPC-Klassifikation: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Klassifikation: G02F3/00; G06N3/00; G11C11/56 AI-Klassifikation: G02F3/02; G06N3/063; G06N3/067; G11C11/56  EP 0364987 A2 1990-04-25  SR   Titel (TI): Semiconductor device. Erfinder: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU Antragsteller: HITACHI LTD (JP) Anmeldenummer: EP19890119349 1989-10-18 Prioritäts-Nummer(n): JP19890001390 1989-01-10   JP19880263892 1988-10-21 EPC-Klassifikation: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56 IPC-Klassifikation: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Klassifikation: G02F3/00; G06N3/00; G11C11/56 AI-Klassifikation: G02F3/02; G06N3/063; G06N3/067; G11C11/56

Alle kollateral zitierenden Dokumente der zitierten Dokumente

Alle kollateral zitierten Dokumente der zitierenden Dokumente

EP 0708487 B1 2001-08-29  SR   Titel (TI): Memory device Erfinder: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Antragsteller: HITACHI EUROP LTD (GB) Anmeldenummer: EP19950304591 1995-06-29 Prioritäts-Nummer(n): GB19940021138 1994-10-20 EPC-Klassifikation: G11C11/56; H01L27/102D; H01L29/88R IPC-Klassifikation: H01L29/88; H01L27/102 CI-Klassifikation: G11C11/56; H01L27/102; H01L29/66 AI-Klassifikation: G11C11/56; H01L27/102; H01L29/88  US 6194303 B1 2001-02-27  CA   Titel (TI): Memory device Erfinder: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Antragsteller: HITACHI LTD (US) Anmeldenummer: US19980082302 1998-05-20 Prioritäts-Nummer(n): US19980082302 1998-05-20   US19950544752 1995-10-18   GB19940021138 1994-10-20 EPC-Klassifikation: G11C11/56; H01L27/102D; H01L29/88R IPC-Klassifikation: H01L21/44 CI-Klassifikation: G11C11/56; H01L27/102; H01L29/66 AI-Klassifikation: G11C11/56; H01L27/102; H01L29/88  US 5811832 A 1998-09-22  SR   Titel (TI): Non-volatile memory device Erfinder: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Antragsteller: HITACHI LTD (JP) Anmeldenummer: US19950544752 1995-10-18 Prioritäts-Nummer(n): GB19940021138 1994-10-20 EPC-Klassifikation: G11C11/56; H01L27/102D; H01L29/88R IPC-Klassifikation: H01L29/88; G11C11/56; H01L27/102; H01L29/205 CI-Klassifikation: G11C11/56; H01L27/102; H01L29/66 AI-Klassifikation: G11C11/56; H01L27/102; H01L29/88  US 5543749 A 1996-08-06  SR   Titel (TI): Resonant tunneling transistor Erfinder: AWANO YUJI (JP) Antragsteller: FUJITSU LTD (JP) Anmeldenummer: US19940363989 1994-12-27 Prioritäts-Nummer(n): US19940363989 1994-12-27   JP19860053725 1986-03-13   US19920985243 1992-12-02   US19910690396 1991-04-25   US19890416004 1989-10-02   US19890323244 1989-03-13   US19870025652 1987-03-13 EPC-Klassifikation: H01L29/15B2C; H01L29/76C IPC-Klassifikation: H01L29/737; H01L29/15 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/15; H01L29/76  EP 0708487 A1 1996-04-24  SR   Titel (TI): Memory device Erfinder: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Antragsteller: HITACHI EUROP LTD (GB) Anmeldenummer: EP19950304591 1995-06-29 Prioritäts-Nummer(n): GB19940021138 1994-10-20 EPC-Klassifikation: G11C11/56; H01L27/102D; H01L29/88R IPC-Klassifikation: H01L29/88; H01L27/102 CI-Klassifikation: G11C11/56; H01L27/102; H01L29/66 AI-Klassifikation: G11C11/56; H01L27/102; H01L29/88  EP 0238406 B1 1993-06-02     Titel (TI): Heterojunction semiconductor device. Erfinder: AWANO YUJI HAISHITI OMOTASANDO Antragsteller: FUJITSU LTD (JP) Anmeldenummer: EP19870400571 1987-03-13 Prioritäts-Nummer(n): JP19860053725 1986-03-13 EPC-Klassifikation: H01L29/15B2C; H01L29/76C IPC-Klassifikation: H01L29/76; H01L29/203 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/15; H01L29/76  EP 0521696 A1 1993-01-07  SR   Titel (TI): Self-doped high performance complementary heterojunction field effect transistor. Erfinder: ZHU THEODORE X (US);   OOMS WILLIAM J (US);   ABROKWAH JONATHAN K (US);   GORONKIN HERBERT (US);   SHURBOFF CARL L (US) Antragsteller: MOTOROLA INC (US) Anmeldenummer: EP19920306029 1992-06-30 Prioritäts-Nummer(n): US19910724077 1991-07-01 EPC-Klassifikation: H01L27/06C; H01L27/092D; H01L29/10D2; H01L29/80B IPC-Klassifikation: H01L29/10; H01L29/76 CI-Klassifikation: H01L27/06; H01L27/085; H01L29/02; H01L29/66 AI-Klassifikation: H01L27/06; H01L27/092; H01L29/10; H01L29/80  EP 0177374 B1 1992-04-15     Titel (TI): High-speed semiconductor device. Erfinder: YOKOYAMA NAOKI Antragsteller: FUJITSU LTD (JP) Anmeldenummer: EP19850401440 1985-07-15 Prioritäts-Nummer(n): JP19840179178 1984-08-30 EPC-Klassifikation: H01L29/15B2; H01L29/15B2C; H01L29/205; H01L29/76C IPC-Klassifikation: H01L29/08; H01L29/205 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/15; H01L29/205; H01L29/76  DE 3737572 C2 1991-11-28     Titel (TI): Controllable quantum pot structure Erfinder: BENEKING HEINZ PROF DR RER NAT (DE) Antragsteller: LICENTIA GMBH (DE);   TELEFUNKEN ELECTRONIC GMBH (DE) Anmeldenummer: DE19873737572 1987-11-05 Prioritäts-Nummer(n): DE19873737572 1987-11-05 EPC-Klassifikation: H01L29/737B6 IPC-Klassifikation: H01L23/48; H01L29/06; H01L29/36; H01L29/68; H01L29/72; H01L29/86 CI-Klassifikation: H01L29/66 AI-Klassifikation: H01L29/737  US 5059545 A 1991-10-22  SR   Titel (TI): Three terminal tunneling device and method Erfinder: FRENSLEY WILLIAM R (US);   REED MARK A (US) Antragsteller: TEXAS INSTRUMENTS INC (US) Anmeldenummer: US19900559521 1990-07-24 Prioritäts-Nummer(n): US19900559521 1990-07-24   US19880231622 1988-08-08   US19850768542 1985-08-23 EPC-Klassifikation: H01L29/76C IPC-Klassifikation: H01L21/205 CI-Klassifikation: H01L29/66 AI-Klassifikation: H01L29/76  US RE33671 E 1991-08-20  SR   Titel (TI): Method of making high mobility multilayered heterojunction device employing modulated doping Anmeldenummer: US19870058668 1987-05-26 Prioritäts-Nummer(n): US19870058668 1987-05-26   US19780899402 1978-04-24   US19790026090 1979-04-02   US19840657051 1984-10-03 EPC-Klassifikation: H01L29/205; H01L29/778C2 IPC-Klassifikation: H01L21/203; H01L29/38 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/205; H01L29/778  EP 0251352 B1 1991-08-14     Titel (TI): Hot charge-carrier transistors. Erfinder: SHANNON JOHN MARTIN Antragsteller: PHILIPS ELECTRONIC ASSOCIATED (GB);   PHILIPS NV (NL) Anmeldenummer: EP19870200888 1987-05-14 Prioritäts-Nummer(n): GB19860012603 1986-05-23 EPC-Klassifikation: H01L29/15B2; H01L29/76C IPC-Klassifikation: H01L29/76; H01L29/08; H01L29/10; H01L29/14 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/15; H01L29/76  US 5032877 A 1991-07-16  SR   Titel (TI): Quantum-coupled ROM Erfinder: BATE ROBERT T (US) Antragsteller: TEXAS INSTRUMENTS INC (US) Anmeldenummer: US19840626808 1984-07-02 Prioritäts-Nummer(n): US19840626808 1984-07-02 EPC-Klassifikation: H01L27/112; H01L29/76D IPC-Klassifikation: H01L29/88; G11C11/40 CI-Klassifikation: H01L27/112; H01L29/66 AI-Klassifikation: H01L27/112; H01L29/76  EP 0297778 A3 1991-04-03     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16  US 4969018 A 1990-11-06  SR   Titel (TI): Quantum-well logic using self-generated potentials Erfinder: REED MARK A (US) Antragsteller: TEXAS INSTRUMENTS INC (US) Anmeldenummer: US19840626807 1984-07-02 Prioritäts-Nummer(n): US19840626807 1984-07-02 EPC-Klassifikation: H01L29/15B; H01L29/15D; H01L29/32; H01L29/76C IPC-Klassifikation: H01L29/88 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/15; H01L29/32; H01L29/76  US 4956681 A 1990-09-11  SR   Titel (TI): Ternary logic circuit using resonant-tunneling transistors Erfinder: YOKOYAMA NAOKI (JP);   TAGUCHI MASAO (JP) Antragsteller: FUJITSU LTD (JP) Anmeldenummer: US19890310463 1989-02-15 Prioritäts-Nummer(n): JP19850223690 1985-10-09 EPC-Klassifikation: F16L55/00; G11C11/39; G11C11/56; H03K3/29; H03K3/36 IPC-Klassifikation: H01L27/12; H01L45/00; H01L49/02 CI-Klassifikation: F16L55/00; G11C11/39; G11C11/56; H03K3/00 AI-Klassifikation: F16L55/00; G11C11/39; G11C11/56; H03K3/29; H03K3/36  US 4912531 A 1990-03-27  SR   Titel (TI): Three-terminal quantum device Erfinder: REED MARK A (US);   BATE ROBERT T (US) Antragsteller: TEXAS INSTRUMENTS INC (US) Anmeldenummer: US19840626551 1984-06-29 Prioritäts-Nummer(n): US19840626551 1984-06-29 EPC-Klassifikation: H01L21/335P4; H01L29/15B; H01L29/15D; H01L29/32; H01L29/76C IPC-Klassifikation: H01L29/205; H01L29/88 CI-Klassifikation: H01L21/02; H01L29/02; H01L29/66 AI-Klassifikation: H01L21/335; H01L29/15; H01L29/32; H01L29/76  US 4903101 A 1990-02-20  SR   Titel (TI): Tunable quantum well infrared detector Erfinder: MASERJIAN JOSEPH (US) Antragsteller: CALIFORNIA INST OF TECHN (US) Anmeldenummer: US19880174111 1988-03-28 Prioritäts-Nummer(n): US19880174111 1988-03-28 EPC-Klassifikation: H01L27/146F3; H01L31/0352B IPC-Klassifikation: H01L27/14 CI-Klassifikation: H01L27/146; H01L31/0248 AI-Klassifikation: H01L27/146; H01L31/0352  DE 3811801 A1 1989-10-19  SR   Erfinder: GOLD ALFRED DR RER NAT (DE) Antragsteller: SIEMENS AG (DE) Anmeldenummer: DE19883811801 1988-04-08 Prioritäts-Nummer(n): DE19883811801 1988-04-08 EPC-Klassifikation: H01L29/205; H01L29/32; H01L29/772D IPC-Klassifikation: H01L29/267; H01L29/78 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/205; H01L29/32; H01L29/772  DE 3737572 A1 1989-05-24  SR   Titel (TI): Controllable quantum pot structure Erfinder: BENEKING HEINZ PROF DR RER NAT (DE) Antragsteller: LICENTIA GMBH (DE);   TELEFUNKEN ELECTRONIC GMBH (DE) Anmeldenummer: DE19873737572 1987-11-05 Prioritäts-Nummer(n): DE19873737572 1987-11-05 EPC-Klassifikation: H01L29/737B6 IPC-Klassifikation: H01L23/48; H01L29/06; H01L29/36; H01L29/68; H01L29/72; H01L29/86 CI-Klassifikation: H01L29/66 AI-Klassifikation: H01L29/737  EP 0297778 A2 1989-01-04  SR   Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16  EP 0251352 A1 1988-01-07  SR   Titel (TI): Hot charge-carrier transistors. Erfinder: SHANNON JOHN MARTIN Antragsteller: PHILIPS ELECTRONIC ASSOCIATED (GB);   PHILIPS NV (NL) Anmeldenummer: EP19870200888 1987-05-14 Prioritäts-Nummer(n): GB19860012603 1986-05-23 EPC-Klassifikation: H01L29/15B2; H01L29/76C IPC-Klassifikation: H01L29/76; H01L29/08; H01L29/10; H01L29/14 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/15; H01L29/76  EP 0177374 A3 1987-11-25     Titel (TI): High-speed semiconductor device. Erfinder: YOKOYAMA NAOKI Antragsteller: FUJITSU LTD (JP) Anmeldenummer: EP19850401440 1985-07-15 Prioritäts-Nummer(n): JP19840179178 1984-08-30 EPC-Klassifikation: H01L29/15B2; H01L29/15B2C; H01L29/205; H01L29/76C IPC-Klassifikation: H01L29/08; H01L29/205 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/15; H01L29/205; H01L29/76  EP 0238406 A3 1987-11-19     Titel (TI): Heterojunction semiconductor device. Erfinder: AWANO YUJI HAISHITI OMOTASANDO Antragsteller: FUJITSU LTD (JP) Anmeldenummer: EP19870400571 1987-03-13 Prioritäts-Nummer(n): JP19860053725 1986-03-13 EPC-Klassifikation: H01L29/15B2C; H01L29/76C IPC-Klassifikation: H01L29/76; H01L29/203 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/15; H01L29/76  EP 0238406 A2 1987-09-23  SR   Titel (TI): Heterojunction semiconductor device. Erfinder: AWANO YUJI HAISHITI OMOTASANDO Antragsteller: FUJITSU LTD (JP) Anmeldenummer: EP19870400571 1987-03-13 Prioritäts-Nummer(n): JP19860053725 1986-03-13 EPC-Klassifikation: H01L29/15B2C; H01L29/76C IPC-Klassifikation: H01L29/76; H01L29/203 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/15; H01L29/76  US 4675711 A 1987-06-23  SR   Titel (TI): Low temperature tunneling transistor Erfinder: HARDER CHRISTOPH S (CH);   WOLF HANS P (CH);   BAECHTOLD WERNER (CH);   GUERET PIERRE L (CH);   BARATOFF ALEXIS (CH) Antragsteller: IBM (US) Anmeldenummer: US19850798653 1985-11-15 Prioritäts-Nummer(n): EP19840115428 1984-12-18 EPC-Klassifikation: H01L29/772 IPC-Klassifikation: H01L29/12; H01L29/66; H01L29/80 CI-Klassifikation: H01L29/66 AI-Klassifikation: H01L29/772  EP 0177374 A2 1986-04-09  SR   Titel (TI): High-speed semiconductor device. Erfinder: YOKOYAMA NAOKI Antragsteller: FUJITSU LTD (JP) Anmeldenummer: EP19850401440 1985-07-15 Prioritäts-Nummer(n): JP19840179178 1984-08-30 EPC-Klassifikation: H01L29/15B2; H01L29/15B2C; H01L29/205; H01L29/76C IPC-Klassifikation: H01L29/08; H01L29/205 CI-Klassifikation: H01L29/02; H01L29/66 AI-Klassifikation: H01L29/15; H01L29/205; H01L29/76  EP 0068064 A1 1983-01-05  SR   Titel (TI): Semiconductor circuit including a resonant quantum mechanical tunnelling triode device. Erfinder: ESAKI LEO Antragsteller: IBM (US) Anmeldenummer: EP19820100162 1982-01-12 Prioritäts-Nummer(n): US19810280141 1981-06-30 EPC-Klassifikation: H01L29/76C IPC-Klassifikation: H01L29/76; H01L29/205 CI-Klassifikation: H01L29/66 AI-Klassifikation: H01L29/76  EP 0005059 B1 1982-11-24     Titel (TI): A semiconductor device having a layered structure and a method of making it. Erfinder: DINGLE RAYMOND;   GOSSARD ARTHUR CHARLES;   STORMER HORST LUDWIG Antragsteller: WESTERN ELECTRIC CO (US) Anmeldenummer: EP19790300652 1979-04-20 Prioritäts-Nummer(n): US19780899402 1978-04-24 EPC-Klassifikation: H01L21/203C6; H01L29/15B2C; H01L29/778C2 IPC-Klassifikation: H01L29/205; H01L21/203; H01L29/10; H01L29/207; H01L29/36; H01L29/80 CI-Klassifikation: H01L21/02; H01L29/02; H01L29/66 AI-Klassifikation: H01L21/203; H01L29/15; H01L29/778  EP 0005059 A3 1979-12-12     Titel (TI): A semiconductor device having a layered structure and a method of making it. Erfinder: DINGLE RAYMOND;   GOSSARD ARTHUR CHARLES;   STORMER HORST LUDWIG Antragsteller: WESTERN ELECTRIC CO (US) Anmeldenummer: EP19790300652 1979-04-20 Prioritäts-Nummer(n): US19780899402 1978-04-24 EPC-Klassifikation: H01L21/203C6; H01L29/15B2C; H01L29/778C2 IPC-Klassifikation: H01L29/205; H01L21/203; H01L29/10; H01L29/207; H01L29/36; H01L29/80 CI-Klassifikation: H01L21/02; H01L29/02; H01L29/66 AI-Klassifikation: H01L21/203; H01L29/15; H01L29/778  EP 0005059 A2 1979-10-31  SR   Titel (TI): A semiconductor device having a layered structure and a method of making it. Erfinder: DINGLE RAYMOND;   GOSSARD ARTHUR CHARLES;   STORMER HORST LUDWIG Antragsteller: WESTERN ELECTRIC CO (US) Anmeldenummer: EP19790300652 1979-04-20 Prioritäts-Nummer(n): US19780899402 1978-04-24 EPC-Klassifikation: H01L21/203C6; H01L29/15B2C; H01L29/778C2 IPC-Klassifikation: H01L29/205; H01L21/203; H01L29/10; H01L29/207; H01L29/36; H01L29/80 CI-Klassifikation: H01L21/02; H01L29/02; H01L29/66 AI-Klassifikation: H01L21/203; H01L29/15; H01L29/778  US 6194303 A Kein Datum  CA

EP 0297778 A3 1991-04-03     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16  EP 0320110 A3 1990-05-09     Titel (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Erfinder: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880310336 1988-11-03 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88  EP 0320110 A2 1989-06-14  SR   Titel (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Erfinder: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880310336 1988-11-03 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88  EP 0297778 A2 1989-01-04  SR   Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16  WO 8702478 A1 1987-04-23  SR   Titel (TI): NONLINEAR AND BISTABLE OPTICAL DEVICE Erfinder: MILLER DAVID ANDREW BARCLAY (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: WO1986US02107 1986-10-03 Prioritäts-Nummer(n): US19850785546 1985-10-08 EPC-Klassifikation: G02F1/017; G02F1/017L; G02F3/02S; H01L31/101 IPC-Klassifikation: G02F1/17; G02F1/015; G02F1/35; G02F3/00; H01L31/02 CI-Klassifikation: G02F1/01; G02F3/00; H01L31/101 AI-Klassifikation: G02F1/017; G02F3/02; H01L31/101