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EP 0297778 A3 1991-04-03     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16  EP 0297778 A2 1989-01-04     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16

EP 0297778    KR 0134096 B1 1998-04-20     Titel (TI): APPARATUS INCLUDING RESONANT TUNNELING DEVICE HVING MULTIPLE-PEAK CURRENT VOLTAGE CHARACTERISTICS Erfinder: CAPASS FEDERICO (US);   YI CHO ALFRED (US);   SEN SUSANTA (US);   SHOJI MASAKAZU (US);   SIVCO DEBORAH (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: KR19880008140 1988-06-30 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L29/86; H01L29/66 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    JP 1929398 C 1995-05-12     Titel (TI): SEMICONDUCTOR DEVICE Erfinder: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN;   MASAKAZU SHIYOOJI;   DEBUORAA SHIBUKO Antragsteller: AMERICAN TELEPHONE & TELEGRAPH Anmeldenummer: JP19880162791 1988-07-01 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L27/08; H01L27/10; H01L29/203; H01L29/66; H01L29/88; H03K5/00; H03K17/58; H03K19/20; H03M13/00 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    JP 6052789 B 1994-07-06     Titel (TI): SEMICONDUCTOR DEVICE Erfinder: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN;   MASAKAZU SHIYOOJI;   DEBUORAA SHIBUKO Antragsteller: AMERICAN TELEPHONE & TELEGRAPH Anmeldenummer: JP19880162791 1988-07-01 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L27/08; H01L27/10; H01L29/203; H01L29/66; H01L29/88; H03K5/00; H03K17/58; H03K19/20; H03M13/00 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    KR 9302817 B1 1993-04-10     Titel (TI): RESONANT-TUNNELING DEVICE Erfinder: CAPASSO FEDERICO (US);   CHO ALFRED E (US);   SEN SUSANTA (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: KR19880014355 1988-11-02 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: H01L27/10 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88    CA 1284234 C 1991-05-14     Titel (TI): APPARATUS INCLUDING RESONANT-TUNNELING DEVICE HAVING MULTIPLE-PEAK CURRENT-VOLTAGE CHARACTERISTICS Erfinder: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US);   SHOJI MASAKAZU (US);   SIVCO DEBORAH (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: CA19880570741 1988-06-29 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L27/06; G11C11/56; H01L29/88 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    CA 1282871 C 1991-04-09     Titel (TI): RESONANT-TUNNELING DEVICE, AND MODE OF DEVICE OPERATION Erfinder: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: CA19880582271 1988-11-04 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/56; H01L29/80 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88    EP 0297778 A3 1991-04-03     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    EP 0320110 A3 1990-05-09     Titel (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Erfinder: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880310336 1988-11-03 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88    US 4902912 A 1990-02-20     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics Erfinder: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US);   SHOJI MASAKAZU (US);   SIVCO DEBORAH (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: US19890366340 1989-06-13 Prioritäts-Nummer(n): US19890366340 1989-06-13   US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L29/205; H01L29/88 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    JP 2003142 A 1990-01-08     Titel (TI): SEMICONDUCTOR DEVICE Erfinder: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN Antragsteller: AMERICAN TELEPHONE & TELEGRAPH Anmeldenummer: JP19880277613 1988-11-04 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; H01L27/10; H01L29/80; H01L29/804 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88    US 4853753 A 1989-08-01     Titel (TI): Resonant-tunneling device, and mode of device operation Erfinder: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US) Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: US19870117583 1987-11-05 Prioritäts-Nummer(n): US19870117583 1987-11-05   US19870068974 1987-07-01 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/76; H01L29/88; H03B19/16    EP 0320110 A2 1989-06-14     Titel (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Erfinder: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880310336 1988-11-03 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88    JP 1039768 A 1989-02-10     Titel (TI): SEMICONDUCTOR DEVICE Erfinder: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN;   MASAKAZU SHIYOOJI;   DEBUORAA SHIBUKO Antragsteller: AMERICAN TELEPHONE & TELEGRAPH Anmeldenummer: JP19880162791 1988-07-01 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: H01L27/08; H01L27/10; H01L29/203; H01L29/66; H01L29/88; H03K5/00; H03K17/58; H03K19/20; H03M13/00 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16    EP 0297778 A2 1989-01-04     Titel (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Erfinder: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880305716 1988-06-22 Prioritäts-Nummer(n): US19870068974 1987-07-01 EPC-Klassifikation: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Klassifikation: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Klassifikation: G11C11/56; H01L29/66; H03B19/00 AI-Klassifikation: G11C11/56; H01L29/76; H01L29/88; H03B19/16

Zitierte Dokumente

Zitierende Dokumente

Non Patent Literature
SR: ELECTRONICS LETTERS, vol. 23, no. 5, 26th February 1987, pages 225-226; F. CAPASSO et al.: "Resonant tunnelling gate field-effect transistor" SR: IEEE ELECTRON DEVICE LETTERS, vol. EDL-8, no. 7, July 1987, pages 297-299; F. CAPASSO et al.: "Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications" SR: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-34, no. 10, October 1987, pages 2185-2191; S. SEN et al.: "Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity"
EP 0320110 A3 1990-05-09     Titel (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Erfinder: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880310336 1988-11-03 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88  EP 0320110 A2 1989-06-14  SR   Titel (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Erfinder: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Antragsteller: AMERICAN TELEPHONE & TELEGRAPH (US) Anmeldenummer: EP19880310336 1988-11-03 Prioritäts-Nummer(n): US19870117583 1987-11-05 EPC-Klassifikation: G11C11/38; G11C11/56; H01L29/88R IPC-Klassifikation: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Klassifikation: G11C11/36; G11C11/56; H01L29/66 AI-Klassifikation: G11C11/38; G11C11/56; H01L29/88  DE 2607940 A1 1977-09-08  SR   Erfinder: TSU RAPHAEL Antragsteller: MAX PLANCK GESELLSCHAFT Anmeldenummer: DE19762607940 1976-02-27 Prioritäts-Nummer(n): DE19762607940 1976-02-27 EPC-Klassifikation: H01L21/203C; H01L21/363; H01L29/15B2C; H01L29/165; H01L29/205; H01L29/76C IPC-Klassifikation: H01L29/267 CI-Klassifikation: H01L21/02; H01L29/02; H01L29/66 AI-Klassifikation: H01L21/203; H01L21/363; H01L29/15; H01L29/165; H01L29/205; H01L29/76	EP 0708487 B1 2001-08-29  CA   Titel (TI): Memory device Erfinder: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Antragsteller: HITACHI EUROP LTD (GB) Anmeldenummer: EP19950304591 1995-06-29 Prioritäts-Nummer(n): GB19940021138 1994-10-20 EPC-Klassifikation: G11C11/56; H01L27/102D; H01L29/88R IPC-Klassifikation: H01L29/88; H01L27/102 CI-Klassifikation: G11C11/56; H01L27/102; H01L29/66 AI-Klassifikation: G11C11/56; H01L27/102; H01L29/88  EP 0364987 B1 1996-05-22     Titel (TI): Semiconductor device. Erfinder: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU Antragsteller: HITACHI LTD (JP) Anmeldenummer: EP19890119349 1989-10-18 Prioritäts-Nummer(n): JP19890001390 1989-01-10   JP19880263892 1988-10-21 EPC-Klassifikation: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56 IPC-Klassifikation: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Klassifikation: G02F3/00; G06N3/00; G11C11/56 AI-Klassifikation: G02F3/02; G06N3/063; G06N3/067; G11C11/56  EP 0708487 A1 1996-04-24  CA   Titel (TI): Memory device Erfinder: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Antragsteller: HITACHI EUROP LTD (GB) Anmeldenummer: EP19950304591 1995-06-29 Prioritäts-Nummer(n): GB19940021138 1994-10-20 EPC-Klassifikation: G11C11/56; H01L27/102D; H01L29/88R IPC-Klassifikation: H01L29/88; H01L27/102 CI-Klassifikation: G11C11/56; H01L27/102; H01L29/66 AI-Klassifikation: G11C11/56; H01L27/102; H01L29/88  EP 0364987 A3 1991-03-13     Titel (TI): Semiconductor device. Erfinder: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU Antragsteller: HITACHI LTD (JP) Anmeldenummer: EP19890119349 1989-10-18 Prioritäts-Nummer(n): JP19890001390 1989-01-10   JP19880263892 1988-10-21 EPC-Klassifikation: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56 IPC-Klassifikation: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Klassifikation: G02F3/00; G06N3/00; G11C11/56 AI-Klassifikation: G02F3/02; G06N3/063; G06N3/067; G11C11/56  EP 0364987 A2 1990-04-25  SR   Titel (TI): Semiconductor device. Erfinder: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU Antragsteller: HITACHI LTD (JP) Anmeldenummer: EP19890119349 1989-10-18 Prioritäts-Nummer(n): JP19890001390 1989-01-10   JP19880263892 1988-10-21 EPC-Klassifikation: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56 IPC-Klassifikation: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Klassifikation: G02F3/00; G06N3/00; G11C11/56 AI-Klassifikation: G02F3/02; G06N3/063; G06N3/067; G11C11/56